@article{0cbd8382ed2c4271bc58a80e30f8a71f,
title = "Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28",
abstract = "We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.",
author = "Weis, \{C. D.\} and Lo, \{C. C.\} and V. Lang and Tyryshkin, \{A. M.\} and George, \{R. E.\} and Yu, \{K. M.\} and J. Bokor and Lyon, \{S. A.\} and Morton, \{J. J.L.\} and T. Schenkel",
note = "Funding Information: We thank the UC Berkeley Marvell Nanolab staff for technical support in device fabrication. C.D.W. thanks Professor I. W. Rangelow for helpful discussions. This work was supported by the U.S. National Security Agency under 100000080295. Additional supports by DOE under Contract No. DE-AC02-05CH11231 (LBNL), EPSRC through CAESR EP/D048559/1 (Oxford), and NSF through the Princeton MRSEC under Grant No. DMR-0213706 (Princeton) are also acknowledged. V.L. is supported by Konrad-Adenauer-Stiftung e.V., EPSRC DTA and Trinity College Oxford. J.J.L.M. is supported by The Royal Society and St. John{\textquoteright}s College, Oxford. K.M.Y. was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE under Contract No. DE-AC02-05CH11231.",
year = "2012",
month = apr,
day = "23",
doi = "10.1063/1.4704561",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "17",
}