Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis; C. C. Lo; V. Lang; A. M. Tyryshkin; R. E. George; K. M. Yu; J. Bokor; S. A. Lyon; J. J.L. Morton; T. Schenkel

doi:10.1063/1.4704561

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis
, C. C. Lo
, V. Lang
, A. M. Tyryshkin
, R. E. George
, K. M. Yu
, J. Bokor
, S. A. Lyon
, J. J.L. Morton
, T. Schenkel

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

Original language	English (US)
Article number	172104
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4704561
State	Published - Apr 23 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4704561

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@article{0cbd8382ed2c4271bc58a80e30f8a71f,

title = "Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28",

abstract = "We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.",

author = "Weis, \{C. D.\} and Lo, \{C. C.\} and V. Lang and Tyryshkin, \{A. M.\} and George, \{R. E.\} and Yu, \{K. M.\} and J. Bokor and Lyon, \{S. A.\} and Morton, \{J. J.L.\} and T. Schenkel",

note = "Funding Information: We thank the UC Berkeley Marvell Nanolab staff for technical support in device fabrication. C.D.W. thanks Professor I. W. Rangelow for helpful discussions. This work was supported by the U.S. National Security Agency under 100000080295. Additional supports by DOE under Contract No. DE-AC02-05CH11231 (LBNL), EPSRC through CAESR EP/D048559/1 (Oxford), and NSF through the Princeton MRSEC under Grant No. DMR-0213706 (Princeton) are also acknowledged. V.L. is supported by Konrad-Adenauer-Stiftung e.V., EPSRC DTA and Trinity College Oxford. J.J.L.M. is supported by The Royal Society and St. John{\textquoteright}s College, Oxford. K.M.Y. was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE under Contract No. DE-AC02-05CH11231.",

year = "2012",

month = apr,

day = "23",

doi = "10.1063/1.4704561",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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TY - JOUR

T1 - Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

AU - Weis, C. D.

AU - Lo, C. C.

AU - Lang, V.

AU - Tyryshkin, A. M.

AU - George, R. E.

AU - Yu, K. M.

AU - Bokor, J.

AU - Lyon, S. A.

AU - Morton, J. J.L.

AU - Schenkel, T.

N1 - Funding Information: We thank the UC Berkeley Marvell Nanolab staff for technical support in device fabrication. C.D.W. thanks Professor I. W. Rangelow for helpful discussions. This work was supported by the U.S. National Security Agency under 100000080295. Additional supports by DOE under Contract No. DE-AC02-05CH11231 (LBNL), EPSRC through CAESR EP/D048559/1 (Oxford), and NSF through the Princeton MRSEC under Grant No. DMR-0213706 (Princeton) are also acknowledged. V.L. is supported by Konrad-Adenauer-Stiftung e.V., EPSRC DTA and Trinity College Oxford. J.J.L.M. is supported by The Royal Society and St. John’s College, Oxford. K.M.Y. was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE under Contract No. DE-AC02-05CH11231.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

AB - We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

UR - https://www.scopus.com/pages/publications/84860321950

UR - https://www.scopus.com/pages/publications/84860321950#tab=citedBy

U2 - 10.1063/1.4704561

DO - 10.1063/1.4704561

M3 - Article

AN - SCOPUS:84860321950

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172104

ER -

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

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