Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J.L. Morton, T. Schenkel

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Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

Original languageEnglish (US)
Article number172104
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
StatePublished - Apr 23 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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