Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. De Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, I. Chakarov

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Abstract

We implanted ultralow doses (2×10 11 cm -2) of antimony ions ( 121Sb) into isotopically enriched silicon ( 28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T 2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO 2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

Original languageEnglish (US)
Article number112101
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
StatePublished - Mar 30 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Schenkel, T., Liddle, J. A., Persaud, A., Tyryshkin, A. M., Lyon, S. A., De Sousa, R., Whaley, K. B., Bokor, J., Shangkuan, J., & Chakarov, I. (2006). Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon. Applied Physics Letters, 88(11), [112101]. https://doi.org/10.1063/1.2182068