Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

T. Schenkel; J. A. Liddle; A. Persaud; A. M. Tyryshkin; S. A. Lyon; R. De Sousa; K. B. Whaley; J. Bokor; J. Shangkuan; I. Chakarov

doi:10.1063/1.2182068

Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. De Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, I. Chakarov

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Abstract

We implanted ultralow doses (2×10 ¹¹ cm ^-2) of antimony ions ( ¹²¹Sb) into isotopically enriched silicon ( ²⁸Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T ₂, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO ₂ interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

Original language	English (US)
Article number	112101
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2182068
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2182068

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@article{4de5b1e1a89d49499304408dfb17712b,

title = "Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon",

abstract = "We implanted ultralow doses (2×10 11 cm -2) of antimony ions ( 121Sb) into isotopically enriched silicon ( 28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T 2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO 2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.",

author = "T. Schenkel and Liddle, {J. A.} and A. Persaud and Tyryshkin, {A. M.} and Lyon, {S. A.} and {De Sousa}, R. and Whaley, {K. B.} and J. Bokor and J. Shangkuan and I. Chakarov",

note = "Funding Information: The authors thank T. C. Shen for many stimulating discussions, and the staff of the UC Berkeley Microlab for their technical support. This work was supported by NSA under ARO Contract No. MOD707501, the Department of Energy under Contract No. DE-AC02-05CH11231, and by NSF under Grant No. 0404208. Work at Princeton was supported by ARO and ARDA under Contract No. DAAD19-02-1-0040. K.B.W. and R.dS. acknowledge support by the DARPA SPINs program under Grant No. FDN0014-01-1-0826. ",

year = "2006",

doi = "10.1063/1.2182068",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

AU - Schenkel, T.

AU - Liddle, J. A.

AU - Persaud, A.

AU - Tyryshkin, A. M.

AU - Lyon, S. A.

AU - De Sousa, R.

AU - Whaley, K. B.

AU - Bokor, J.

AU - Shangkuan, J.

AU - Chakarov, I.

N1 - Funding Information: The authors thank T. C. Shen for many stimulating discussions, and the staff of the UC Berkeley Microlab for their technical support. This work was supported by NSA under ARO Contract No. MOD707501, the Department of Energy under Contract No. DE-AC02-05CH11231, and by NSF under Grant No. 0404208. Work at Princeton was supported by ARO and ARDA under Contract No. DAAD19-02-1-0040. K.B.W. and R.dS. acknowledge support by the DARPA SPINs program under Grant No. FDN0014-01-1-0826.

PY - 2006

Y1 - 2006

N2 - We implanted ultralow doses (2×10 11 cm -2) of antimony ions ( 121Sb) into isotopically enriched silicon ( 28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T 2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO 2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

AB - We implanted ultralow doses (2×10 11 cm -2) of antimony ions ( 121Sb) into isotopically enriched silicon ( 28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T 2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO 2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

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DO - 10.1063/1.2182068

M3 - Article

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SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112101

ER -

Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

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