Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

A. Vinattieri; Jagdeep Shah; T. C. Damen; K. W. Goossen; L. N. Pfeiffer; M. Z. Maialle; L. J. Sham

doi:10.1063/1.110211

Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

A. Vinattieri, Jagdeep Shah, T. C. Damen, K. W. Goossen, L. N. Pfeiffer, M. Z. Maialle, L. J. Sham

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Abstract

We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

Original language	English (US)
Pages (from-to)	3164-3166
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	23
DOIs	https://doi.org/10.1063/1.110211
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110211

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@article{60d2974a7c8443c689d51b7ad37743b4,

title = "Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells",

abstract = "We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.",

author = "A. Vinattieri and Jagdeep Shah and Damen, \{T. C.\} and Goossen, \{K. W.\} and Pfeiffer, \{L. N.\} and Maialle, \{M. Z.\} and Sham, \{L. J.\}",

year = "1993",

doi = "10.1063/1.110211",

language = "English (US)",

volume = "63",

pages = "3164--3166",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

AU - Vinattieri, A.

AU - Shah, Jagdeep

AU - Damen, T. C.

AU - Goossen, K. W.

AU - Pfeiffer, L. N.

AU - Maialle, M. Z.

AU - Sham, L. J.

PY - 1993

Y1 - 1993

N2 - We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

AB - We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

UR - https://www.scopus.com/pages/publications/0001583578

UR - https://www.scopus.com/inward/citedby.url?scp=0001583578&partnerID=8YFLogxK

U2 - 10.1063/1.110211

DO - 10.1063/1.110211

M3 - Article

AN - SCOPUS:0001583578

SN - 0003-6951

VL - 63

SP - 3164

EP - 3166

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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