Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

A. Vinattieri; Jagdeep Shah; T. C. Damen; K. W. Goossen; L. N. Pfeiffer; M. Z. Maialle; L. J. Sham

doi:10.1063/1.110211

Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

A. Vinattieri, Jagdeep Shah, T. C. Damen, K. W. Goossen, L. N. Pfeiffer, M. Z. Maialle, L. J. Sham

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48 Scopus citations

Abstract

We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

Original language	English (US)
Pages (from-to)	3164-3166
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	23
DOIs	https://doi.org/10.1063/1.110211
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110211

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title = "Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells",

abstract = "We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.",

author = "A. Vinattieri and Jagdeep Shah and Damen, {T. C.} and Goossen, {K. W.} and Pfeiffer, {L. N.} and Maialle, {M. Z.} and Sham, {L. J.}",

year = "1993",

doi = "10.1063/1.110211",

language = "English (US)",

volume = "63",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

AU - Vinattieri, A.

AU - Shah, Jagdeep

AU - Damen, T. C.

AU - Goossen, K. W.

AU - Pfeiffer, L. N.

AU - Maialle, M. Z.

AU - Sham, L. J.

PY - 1993

Y1 - 1993

N2 - We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

AB - We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

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DO - 10.1063/1.110211

M3 - Article

AN - SCOPUS:0001583578

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SP - 3164

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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