Elastic scattering in resonant tunneling devices with one degree of freedom

E. Wolak; K. Shepard; S. Y. Chou; J. S. Harris

doi:10.1016/0749-6036(89)90294-2

Elastic scattering in resonant tunneling devices with one degree of freedom

E. Wolak, K. Shepard, S. Y. Chou, J. S. Harris

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of elastic scattering centers on the current-voltage (I-V) characteristics of double barrier resonant tunneling diodes with transverse confinement is examined. It is shown that elastic scattering centers break the separation of variables condition, and allow transitions between states of different transverse confinement. The changes to the transmission coefficients through the structure due to elastic scattering in the well of a resonant tunneling device are modeled by using perturbation theory. It is shown that additional structure in the I-V characteristics may result.

Original language	English (US)
Pages (from-to)	251-253
Number of pages	3
Journal	Superlattices and Microstructures
Volume	5
Issue number	2
DOIs	https://doi.org/10.1016/0749-6036(89)90294-2
State	Published - 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(89)90294-2

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@article{aaf0033a35b64fe58a9fc7a74af31f6e,

title = "Elastic scattering in resonant tunneling devices with one degree of freedom",

abstract = "The effect of elastic scattering centers on the current-voltage (I-V) characteristics of double barrier resonant tunneling diodes with transverse confinement is examined. It is shown that elastic scattering centers break the separation of variables condition, and allow transitions between states of different transverse confinement. The changes to the transmission coefficients through the structure due to elastic scattering in the well of a resonant tunneling device are modeled by using perturbation theory. It is shown that additional structure in the I-V characteristics may result.",

author = "E. Wolak and K. Shepard and Chou, {S. Y.} and Harris, {J. S.}",

note = "Funding Information: Acknowledgements: E.W. would like to acknowlege many useful discussions with Eric Hellman. K. S. wishes to acknowledge the Fannie and John Hertz foundation for fellowship support. This work was supported by the Defense Advanced Projects Agency (DARPA) under grant no. NOOO14-84-K-0077. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1989",

doi = "10.1016/0749-6036(89)90294-2",

language = "English (US)",

volume = "5",

pages = "251--253",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Elastic scattering in resonant tunneling devices with one degree of freedom

AU - Wolak, E.

AU - Shepard, K.

AU - Chou, S. Y.

AU - Harris, J. S.

N1 - Funding Information: Acknowledgements: E.W. would like to acknowlege many useful discussions with Eric Hellman. K. S. wishes to acknowledge the Fannie and John Hertz foundation for fellowship support. This work was supported by the Defense Advanced Projects Agency (DARPA) under grant no. NOOO14-84-K-0077. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1989

Y1 - 1989

N2 - The effect of elastic scattering centers on the current-voltage (I-V) characteristics of double barrier resonant tunneling diodes with transverse confinement is examined. It is shown that elastic scattering centers break the separation of variables condition, and allow transitions between states of different transverse confinement. The changes to the transmission coefficients through the structure due to elastic scattering in the well of a resonant tunneling device are modeled by using perturbation theory. It is shown that additional structure in the I-V characteristics may result.

AB - The effect of elastic scattering centers on the current-voltage (I-V) characteristics of double barrier resonant tunneling diodes with transverse confinement is examined. It is shown that elastic scattering centers break the separation of variables condition, and allow transitions between states of different transverse confinement. The changes to the transmission coefficients through the structure due to elastic scattering in the well of a resonant tunneling device are modeled by using perturbation theory. It is shown that additional structure in the I-V characteristics may result.

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U2 - 10.1016/0749-6036(89)90294-2

DO - 10.1016/0749-6036(89)90294-2

M3 - Article

AN - SCOPUS:0024939436

SN - 0749-6036

VL - 5

SP - 251

EP - 253

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Elastic scattering in resonant tunneling devices with one degree of freedom

Abstract

All Science Journal Classification (ASJC) codes

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