Elastic scattering in resonant tunneling devices with one degree of freedom

E. Wolak, K. Shepard, S. Y. Chou, J. S. Harris

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effect of elastic scattering centers on the current-voltage (I-V) characteristics of double barrier resonant tunneling diodes with transverse confinement is examined. It is shown that elastic scattering centers break the separation of variables condition, and allow transitions between states of different transverse confinement. The changes to the transmission coefficients through the structure due to elastic scattering in the well of a resonant tunneling device are modeled by using perturbation theory. It is shown that additional structure in the I-V characteristics may result.

Original languageEnglish (US)
Pages (from-to)251-253
Number of pages3
JournalSuperlattices and Microstructures
Volume5
Issue number2
DOIs
StatePublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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