ELASTIC LOW-ENERGY ELECTRON DIFFRACTION FROM GaAs(110)-p(1 multiplied by 1)-Sb(1 ML).

Antoine Kahn, J. Carelli, C. B. Duke, A. Paton, W. K. Ford

Research output: Contribution to journalConference article

9 Scopus citations

Abstract

Auger electron spectroscopy and low-energy electron diffraction are used to investigate the interface formed by the evaporation of Sb on room temperature GaAs(110). In contrast to Al, the Sb overlayer is ordered and produces a (1 multiplied by 1) diffraction pattern with intensity profiles very different from those measured from the clean substrate surface. The interface is sharp and stable under heat treatment, the Sb film is continuous and thermal desorption experiments reveal the strong bonding that exists between the first Sb monolayer and the substrate. The atomic structure of the GaAs(110)-p(1 multiplied by 1)-Sb(1 ML) system is analyzed with multiple scattering computations. Three types of structures have been examined: chains of Sb atoms parallel and antiparallel to the top layer Ga-As chains, Sb//2 dimers attached to the surface Ga species, and a ″jellium″ type structure in which one Sb is bonded to the surface Ga atom and the other Sb is randomly distributed above the surface. Only single scattering computation, however, has been used for the later model. Qualitative description of the measured intensities are achieved by structures of the first (antiparallel chains) and third models.

Original languageEnglish (US)
Pages (from-to)775-777
Number of pages3
JournalJournal of vacuum science & technology
Volume20
Issue number3
DOIs
StatePublished - Jan 1 1981
EventProc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA
Duration: Nov 2 1981Nov 6 1981

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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