Elastic electron fine structure: Application to the study of local order

B. Y. Lin, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Oscillations are found in the integrated intensity of elastic electrons scattered from amorphous Si. These oscillations are attributed to the multiple scattering of elastic waves between a central atom and its neighbors, an effect which is similar to but more general than that found in extended x-ray absorption fine structure and related phenomena. The Fourier analysis of the signal obtained with amorphous Si produces a dominant peak which closely corresponds to twice the nearest-neighbor distance. The result of a first-principle multiple-scattering calculation reproduces remarkably well in the experiment and clearly demonstrates the physical processes responsible for these oscillations.

Original languageEnglish (US)
Pages (from-to)2085-2088
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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