Effects of SO2 and I2 on the Photoluminescence of Oxidized Porous Silicon

Michael T. Kelly; Andrew Bruce Bocarsly

doi:10.1021/cm9700561

Effects of SO₂ and I₂ on the Photoluminescence of Oxidized Porous Silicon

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Abstract

The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for Brönsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy, and surface chemistry. The feasibility of fashioning a SO₂ sensor using oxidized porous silicon is also discussed.

Original language	English (US)
Pages (from-to)	1659-1664
Number of pages	6
Journal	Chemistry of Materials
Volume	9
Issue number	7
DOIs	https://doi.org/10.1021/cm9700561
State	Published - Jul 1997

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/cm9700561

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@article{66eaaa9870a545289649cec34e382f91,

title = "Effects of SO2 and I2 on the Photoluminescence of Oxidized Porous Silicon",

abstract = "The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for Br{\"o}nsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy, and surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.",

author = "Kelly, \{Michael T.\} and Bocarsly, \{Andrew Bruce\}",

year = "1997",

month = jul,

doi = "10.1021/cm9700561",

language = "English (US)",

volume = "9",

pages = "1659--1664",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Effects of SO2 and I2 on the Photoluminescence of Oxidized Porous Silicon

AU - Kelly, Michael T.

AU - Bocarsly, Andrew Bruce

PY - 1997/7

Y1 - 1997/7

N2 - The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for Brönsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy, and surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.

AB - The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for Brönsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy, and surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.

UR - https://www.scopus.com/pages/publications/0001290498

UR - https://www.scopus.com/pages/publications/0001290498#tab=citedBy

U2 - 10.1021/cm9700561

DO - 10.1021/cm9700561

M3 - Article

AN - SCOPUS:0001290498

SN - 0897-4756

VL - 9

SP - 1659

EP - 1664

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 7

ER -

Effects of SO₂ and I₂ on the Photoluminescence of Oxidized Porous Silicon

Abstract

All Science Journal Classification (ASJC) codes

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