Abstract
The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for Brönsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy, and surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.
Original language | English (US) |
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Pages (from-to) | 1659-1664 |
Number of pages | 6 |
Journal | Chemistry of Materials |
Volume | 9 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1997 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Chemical Engineering
- Materials Chemistry