Effects of radiation damage on the charge density wave transitions in NbSe3

W. W. Fuller, P. M. Chaikin, Nai Phuan Ong

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

Original languageEnglish (US)
Pages (from-to)547-551
Number of pages5
JournalSolid State Communications
Volume39
Issue number4
DOIs
StatePublished - Jan 1 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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