Effects of radiation damage on the charge density wave transitions in NbSe3

W. W. Fuller; P. M. Chaikin; N. P. Ong

doi:10.1016/0038-1098(81)90320-3

Effects of radiation damage on the charge density wave transitions in NbSe₃

W. W. Fuller, P. M. Chaikin, N. P. Ong

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11 Scopus citations

Abstract

We have measured the electrical resistivity of NbSe₃ samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

Original language	English (US)
Pages (from-to)	547-551
Number of pages	5
Journal	Solid State Communications
Volume	39
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(81)90320-3
State	Published - Jul 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(81)90320-3

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@article{1b7e51a7dd82455fb885a6799e3f2f8f,

title = "Effects of radiation damage on the charge density wave transitions in NbSe3",

abstract = "We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.",

author = "Fuller, {W. W.} and Chaikin, {P. M.} and Ong, {N. P.}",

note = "Funding Information: We would llke to acknowledg~ helpful dis-cusslons with W. G. Clark, G. Gruner, T. Hols=eln and P. Pincus. Research at UCLA was supported by the NSF under Grant #DME 7908560 (P.M.C.) and ONR under Grant N00014-76-C-I078 (W.W.F.) and at U.S.C. under Grant #DMR 79-05418. P.M.C. is an A. P. Sloan Foundation Fellow. W.W. was an IBM predoctoral fellow.",

year = "1981",

month = jul,

doi = "10.1016/0038-1098(81)90320-3",

language = "English (US)",

volume = "39",

pages = "547--551",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "4",

}

TY - JOUR

T1 - Effects of radiation damage on the charge density wave transitions in NbSe3

AU - Fuller, W. W.

AU - Chaikin, P. M.

AU - Ong, N. P.

N1 - Funding Information: We would llke to acknowledg~ helpful dis-cusslons with W. G. Clark, G. Gruner, T. Hols=eln and P. Pincus. Research at UCLA was supported by the NSF under Grant #DME 7908560 (P.M.C.) and ONR under Grant N00014-76-C-I078 (W.W.F.) and at U.S.C. under Grant #DMR 79-05418. P.M.C. is an A. P. Sloan Foundation Fellow. W.W. was an IBM predoctoral fellow.

PY - 1981/7

Y1 - 1981/7

N2 - We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

AB - We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

UR - http://www.scopus.com/inward/record.url?scp=0019586376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019586376&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(81)90320-3

DO - 10.1016/0038-1098(81)90320-3

M3 - Article

AN - SCOPUS:0019586376

SN - 0038-1098

VL - 39

SP - 547

EP - 551

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Effects of radiation damage on the charge density wave transitions in NbSe₃

Abstract

All Science Journal Classification (ASJC) codes

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