EFFECTS OF CATION ORDER ON THE ENERGY BANDS OF GaAs-AlAs HETEROSTRUCTURES.

W. Andreoni; Roberto Car; A. Baldereschi

EFFECTS OF CATION ORDER ON THE ENERGY BANDS OF GaAs-AlAs HETEROSTRUCTURES.

W. Andreoni
, Roberto Car
, A. Baldereschi

Research output: Contribution to conference › Paper › peer-review

Abstract

Comparative band structure calculation for Ga//0//. //5Al//0//. //5As and (GaAs)//l-(AlAs)//l (l equals 1-4) show that the effects of cation order are small. The energy bands for l equals 1 are well approximated by folding those of Ga//0//. //5Al//0//. //5As. The direct energy gap at GAMMA decreases relative to l equals 1 by 4 meV, 10 meV, and 16 meV for l equals 2,3,4, respectively.

Original language	English (US)
Pages	733-736
Number of pages	4
State	Published - 1979
Event	Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978

Other

Other	Pap from the Int Conf on the Phys of Semicond, 14th
City	Edinburgh, Scotl
Period	9/4/78 → 9/8/78

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{fd3b24cd75b54518880818e96be2ef31,

title = "EFFECTS OF CATION ORDER ON THE ENERGY BANDS OF GaAs-AlAs HETEROSTRUCTURES.",

abstract = "Comparative band structure calculation for Ga//0//. //5Al//0//. //5As and (GaAs)//l-(AlAs)//l (l equals 1-4) show that the effects of cation order are small. The energy bands for l equals 1 are well approximated by folding those of Ga//0//. //5Al//0//. //5As. The direct energy gap at GAMMA decreases relative to l equals 1 by 4 meV, 10 meV, and 16 meV for l equals 2,3,4, respectively.",

author = "W. Andreoni and Roberto Car and A. Baldereschi",

note = "Funding Information: Acknowledg\textasciitilde{}e\textasciitilde{}£ - This research was supported in part by the Swiss National Science Foundation.; Pap from the Int Conf on the Phys of Semicond, 14th ; Conference date: 04-09-1978 Through 08-09-1978",

year = "1979",

language = "English (US)",

pages = "733--736",

}

TY - CONF

T1 - EFFECTS OF CATION ORDER ON THE ENERGY BANDS OF GaAs-AlAs HETEROSTRUCTURES.

AU - Andreoni, W.

AU - Car, Roberto

AU - Baldereschi, A.

N1 - Funding Information: Acknowledg~e~£ - This research was supported in part by the Swiss National Science Foundation.

PY - 1979

Y1 - 1979

N2 - Comparative band structure calculation for Ga//0//. //5Al//0//. //5As and (GaAs)//l-(AlAs)//l (l equals 1-4) show that the effects of cation order are small. The energy bands for l equals 1 are well approximated by folding those of Ga//0//. //5Al//0//. //5As. The direct energy gap at GAMMA decreases relative to l equals 1 by 4 meV, 10 meV, and 16 meV for l equals 2,3,4, respectively.

AB - Comparative band structure calculation for Ga//0//. //5Al//0//. //5As and (GaAs)//l-(AlAs)//l (l equals 1-4) show that the effects of cation order are small. The energy bands for l equals 1 are well approximated by folding those of Ga//0//. //5Al//0//. //5As. The direct energy gap at GAMMA decreases relative to l equals 1 by 4 meV, 10 meV, and 16 meV for l equals 2,3,4, respectively.

UR - https://www.scopus.com/pages/publications/0018295080

UR - https://www.scopus.com/pages/publications/0018295080#tab=citedBy

M3 - Paper

AN - SCOPUS:0018295080

SP - 733

EP - 736

T2 - Pap from the Int Conf on the Phys of Semicond, 14th

Y2 - 4 September 1978 through 8 September 1978

ER -

EFFECTS OF CATION ORDER ON THE ENERGY BANDS OF GaAs-AlAs HETEROSTRUCTURES.

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All Science Journal Classification (ASJC) codes

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