Abstract
Comparative band structure calculation for Ga//0//. //5Al//0//. //5As and (GaAs)//l-(AlAs)//l (l equals 1-4) show that the effects of cation order are small. The energy bands for l equals 1 are well approximated by folding those of Ga//0//. //5Al//0//. //5As. The direct energy gap at GAMMA decreases relative to l equals 1 by 4 meV, 10 meV, and 16 meV for l equals 2,3,4, respectively.
Original language | English (US) |
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Pages | 733-736 |
Number of pages | 4 |
State | Published - 1979 |
Event | Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978 |
Other
Other | Pap from the Int Conf on the Phys of Semicond, 14th |
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City | Edinburgh, Scotl |
Period | 9/4/78 → 9/8/78 |
All Science Journal Classification (ASJC) codes
- General Engineering