Effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor

Y. Wang, S. Y. Chou, M. R. Melloch

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The combined effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor are investigated. A simple formula that quantitatively describes both effects is derived and found to fit experiments well. Other energy broadening factors are found to be significant. Furthermore, due to the strong confinement potential in the device, the current quantization is still observable at a temperature up to 26 K or with a drain bias up to 12 mV.

Original languageEnglish (US)
Pages (from-to)227-230
Number of pages4
JournalSuperlattices and Microstructures
Volume14
Issue number2-3
DOIs
StatePublished - Sep 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor'. Together they form a unique fingerprint.

Cite this