Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

S. J. Potashnik; K. C. Ku; S. H. Chun; J. J. Berry; N. Samarth; P. Schiffer

doi:10.1063/1.1398619

Effects of annealing time on defect-controlled ferromagnetism in Ga_1-xMn_xAs

S. J. Potashnik, K. C. Ku, S. H. Chun, J. J. Berry, N. Samarth, P. Schiffer

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354 Scopus citations

Abstract

We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga_1-xMn_xAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga_1-xMn_xAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

Original language	English (US)
Pages (from-to)	1495-1497
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1398619
State	Published - Sep 3 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1398619

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abstract = "We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.",

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T1 - Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

AU - Potashnik, S. J.

AU - Ku, K. C.

AU - Chun, S. H.

AU - Berry, J. J.

AU - Samarth, N.

AU - Schiffer, P.

PY - 2001/9/3

Y1 - 2001/9/3

N2 - We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

AB - We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Effects of annealing time on defect-controlled ferromagnetism in Ga_1-xMn_xAs

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