Abstract
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.
Original language | English (US) |
---|---|
Pages (from-to) | 1495-1497 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 10 |
DOIs | |
State | Published - Sep 3 2001 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)