Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ Si(100) modulation doped heterostructures

C. L. Chang; S. P. Shukla; W. Pan; V. Venkataraman; J. C. Sturm; M. Shayegan

doi:10.1016/S0040-6090(98)00442-8

Effective mass measurement in two-dimensional hole gas in strained Si_1-x-yGe_xC_y/ Si(100) modulation doped heterostructures

C. L. Chang, S. P. Shukla, W. Pan, V. Venkataraman, J. C. Sturm, M. Shayegan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A two-dimensional hole gas in the Si_1-x-yGe_xC_y channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does not change the effective mass of holes in Si_1-xGe_x. It suggests that the valence band structure of Si_1-x-yGe_xC_y is similar to that of Si_1-x-yGe_xC_y.

Original language	English (US)
Pages (from-to)	51-54
Number of pages	4
Journal	Thin Solid Films
Volume	321
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00442-8
State	Published - May 26 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

2D hole gas
Mass measurement
Si(100)

Access to Document

10.1016/S0040-6090(98)00442-8

Cite this

@article{f72a8ebf526e488a9c6bbfc94f042fa6,

title = "Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ Si(100) modulation doped heterostructures",

abstract = "A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does not change the effective mass of holes in Si1-xGex. It suggests that the valence band structure of Si1-x-yGexCy is similar to that of Si1-x-yGexCy.",

keywords = "2D hole gas, Mass measurement, Si(100)",

author = "Chang, {C. L.} and Shukla, {S. P.} and W. Pan and V. Venkataraman and Sturm, {J. C.} and M. Shayegan",

note = "Funding Information: The authors would like to thank USAF Rome Lab, AFOSR and ONR for funding this research. The assistance of M. Yang in band structure calculations, C.C. Li in 3 He system operation and J.P. Lu for data reduction is also greatly appreciated. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "1998",

month = may,

day = "26",

doi = "10.1016/S0040-6090(98)00442-8",

language = "English (US)",

volume = "321",

pages = "51--54",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ Si(100) modulation doped heterostructures

AU - Chang, C. L.

AU - Shukla, S. P.

AU - Pan, W.

AU - Venkataraman, V.

AU - Sturm, J. C.

AU - Shayegan, M.

N1 - Funding Information: The authors would like to thank USAF Rome Lab, AFOSR and ONR for funding this research. The assistance of M. Yang in band structure calculations, C.C. Li in 3 He system operation and J.P. Lu for data reduction is also greatly appreciated. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 1998/5/26

Y1 - 1998/5/26

N2 - A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does not change the effective mass of holes in Si1-xGex. It suggests that the valence band structure of Si1-x-yGexCy is similar to that of Si1-x-yGexCy.

AB - A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does not change the effective mass of holes in Si1-xGex. It suggests that the valence band structure of Si1-x-yGexCy is similar to that of Si1-x-yGexCy.

KW - 2D hole gas

KW - Mass measurement

KW - Si(100)

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U2 - 10.1016/S0040-6090(98)00442-8

DO - 10.1016/S0040-6090(98)00442-8

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VL - 321

SP - 51

EP - 54

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

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