Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ Si(100) modulation doped heterostructures

C. L. Chang, S. P. Shukla, W. Pan, V. Venkataraman, J. C. Sturm, M. Shayegan

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A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does not change the effective mass of holes in Si1-xGex. It suggests that the valence band structure of Si1-x-yGexCy is similar to that of Si1-x-yGexCy.

Original languageEnglish (US)
Pages (from-to)51-54
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - May 26 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


  • 2D hole gas
  • Mass measurement
  • Si(100)


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