Effect of wave-function anisotropy on the metal-insulator transition density in many-valley semiconductors

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

It is shown that in the absence of central cell corrections, anisotropy of the donor envelope functions is the most important factor in determining the change in the metal-insulator transition density as a function of uniaxial stress in n-doped many-valley semiconductors. Quantitative agreement is obtained with experimental results for antimony-doped germanium, and a prediction made for the corresponding case in silicon.

Original languageEnglish (US)
Pages (from-to)3630-3633
Number of pages4
JournalPhysical Review B
Volume24
Issue number6
DOIs
StatePublished - Jan 1 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effect of wave-function anisotropy on the metal-insulator transition density in many-valley semiconductors'. Together they form a unique fingerprint.

  • Cite this