It is shown that in the absence of central cell corrections, anisotropy of the donor envelope functions is the most important factor in determining the change in the metal-insulator transition density as a function of uniaxial stress in n-doped many-valley semiconductors. Quantitative agreement is obtained with experimental results for antimony-doped germanium, and a prediction made for the corresponding case in silicon.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B|
|State||Published - Jan 1 1981|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics