TY - JOUR
T1 - Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics
AU - Aung, Nyan L.
AU - Huang, Xue
AU - Charles, Williams O.
AU - Yao, Nan
AU - Gmachl, Claire F.
N1 - Funding Information:
The authors would like to acknowledge Gerald R. Poirier and Dr. Shiyou Xu from the Princeton Imaging and Analysis Center for their help in using the FIB and SEM tools. This work is supported in part by MIRTHE ( NSF-ERC # EEC-0540832 ), NSF Grant # ECCS-1028364 , NSF Grant # HRD-0833180 , NSF Grant # IIP-0917956 , and NSF-MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860).
PY - 2012/8/15
Y1 - 2012/8/15
N2 - We investigate the impact of surface defect density on the transport properties of molecular beam epitaxy grown InGaAs/AlInAs Quantum Cascade (QC) structures. We examine six parameters of the current-voltage (IV) characteristics of the QC mesas: turn-on voltage, turn-on current density, turn-on differential resistance, differential resistance, cut-off voltage, and cut-off current density. The analyses for pulsed mode operation (T=80 K and 300 K) and continuous wave (CW) operation (80 K) show that all six parameters are only weakly correlated to surface defects. The turn-on voltage and current density share a negative correlation with defects (>-0.26) in both pulsed mode and CW operation at 80 K, and a positive correlation in pulsed mode at 300 K (<0.21). The cut-off voltage has a positive correlation in all three modes of operation (<0.51). The cut-off current density has a positive correlation (<0.39) in both pulsed mode (80 K and 300 K) and a negligible correlation in CW operation (80 K). We observed insignificant correlation coefficients (<0.1) for differential resistances at 80 K along with a weak negative correlation (>-0.29) in pulsed mode at 300 K. Our analysis demonstrates that shallow oval and a few deep oval defects have little influence on IV.
AB - We investigate the impact of surface defect density on the transport properties of molecular beam epitaxy grown InGaAs/AlInAs Quantum Cascade (QC) structures. We examine six parameters of the current-voltage (IV) characteristics of the QC mesas: turn-on voltage, turn-on current density, turn-on differential resistance, differential resistance, cut-off voltage, and cut-off current density. The analyses for pulsed mode operation (T=80 K and 300 K) and continuous wave (CW) operation (80 K) show that all six parameters are only weakly correlated to surface defects. The turn-on voltage and current density share a negative correlation with defects (>-0.26) in both pulsed mode and CW operation at 80 K, and a positive correlation in pulsed mode at 300 K (<0.21). The cut-off voltage has a positive correlation in all three modes of operation (<0.51). The cut-off current density has a positive correlation (<0.39) in both pulsed mode (80 K and 300 K) and a negligible correlation in CW operation (80 K). We observed insignificant correlation coefficients (<0.1) for differential resistances at 80 K along with a weak negative correlation (>-0.29) in pulsed mode at 300 K. Our analysis demonstrates that shallow oval and a few deep oval defects have little influence on IV.
KW - A3. Molecular beam epitaxy
KW - A3. Quantum wells
KW - B2. Semiconducting III-V materials
KW - B3. Quantum Cascade device
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U2 - 10.1016/j.jcrysgro.2012.04.037
DO - 10.1016/j.jcrysgro.2012.04.037
M3 - Article
AN - SCOPUS:84861470905
SN - 0022-0248
VL - 353
SP - 35
EP - 38
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -