Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

Alex Z. Kattamis, Kunigunde H. Cherenack, Bahman Hekmatshoar, I. Chun Cheng, Helena Gleskova, James C. Sturm, Sigard Wagner

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.

Original languageEnglish (US)
Pages (from-to)606-608
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number7
DOIs
StatePublished - Jul 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Amorphous-silicon (a-Si:H)
  • Electrical stability
  • Flexible substrate
  • Plasma power
  • Silicon nitride gate dielectric
  • Thin-film transistor (TFT)

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    Kattamis, A. Z., Cherenack, K. H., Hekmatshoar, B., Cheng, I. C., Gleskova, H., Sturm, J. C., & Wagner, S. (2007). Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. IEEE Electron Device Letters, 28(7), 606-608. https://doi.org/10.1109/LED.2007.900078