Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

Alex Z. Kattamis; Kunigunde H. Cherenack; Bahman Hekmatshoar; I. Chun Cheng; Helena Gleskova; James C. Sturm; Sigard Wagner

doi:10.1109/LED.2007.900078

Effect of SiN_x gate dielectric deposition power and temperature on a-Si:H TFT stability

Alex Z. Kattamis, Kunigunde H. Cherenack, Bahman Hekmatshoar, I. Chun Cheng, Helena Gleskova, James C. Sturm, Sigard Wagner

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm² and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiN_x gate dielectric deposited at the highest possible power and temperature.

Original language	English (US)
Pages (from-to)	606-608
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	7
DOIs	https://doi.org/10.1109/LED.2007.900078
State	Published - Jul 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Amorphous-silicon (a-Si:H)
Electrical stability
Flexible substrate
Plasma power
Silicon nitride gate dielectric
Thin-film transistor (TFT)

Access to Document

10.1109/LED.2007.900078

Cite this

@article{211c01911c914e2ba909d7dfb6715707,

title = "Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability",

abstract = "The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.",

keywords = "Amorphous-silicon (a-Si:H), Electrical stability, Flexible substrate, Plasma power, Silicon nitride gate dielectric, Thin-film transistor (TFT)",

author = "Kattamis, {Alex Z.} and Cherenack, {Kunigunde H.} and Bahman Hekmatshoar and Cheng, {I. Chun} and Helena Gleskova and Sturm, {James C.} and Sigard Wagner",

note = "Funding Information: The authors would like to thank the Unites States Display Consortium for support of this work and the DuPont Company for technical collaboration. One author, A. Z. Kattamis, would like to thank the Princeton Plasma Physics Laboratory for a fellowship.",

year = "2007",

month = jul,

doi = "10.1109/LED.2007.900078",

language = "English (US)",

volume = "28",

pages = "606--608",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

AU - Kattamis, Alex Z.

AU - Cherenack, Kunigunde H.

AU - Hekmatshoar, Bahman

AU - Cheng, I. Chun

AU - Gleskova, Helena

AU - Sturm, James C.

AU - Wagner, Sigard

N1 - Funding Information: The authors would like to thank the Unites States Display Consortium for support of this work and the DuPont Company for technical collaboration. One author, A. Z. Kattamis, would like to thank the Princeton Plasma Physics Laboratory for a fellowship.

PY - 2007/7

Y1 - 2007/7

N2 - The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.

AB - The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.

KW - Amorphous-silicon (a-Si:H)

KW - Electrical stability

KW - Flexible substrate

KW - Plasma power

KW - Silicon nitride gate dielectric

KW - Thin-film transistor (TFT)

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JO - IEEE Electron Device Letters

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