Abstract
The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150 °C and 300 °C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.
Original language | English (US) |
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Pages (from-to) | 606-608 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Keywords
- Amorphous-silicon (a-Si:H)
- Electrical stability
- Flexible substrate
- Plasma power
- Silicon nitride gate dielectric
- Thin-film transistor (TFT)