Effect of radiation damage on the charge-density-wave dynamics in NbSe3

W. W. Fuller, G. Gr̈ner, P. M. Chaikin, Nai Phuan Ong

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

We have used 2.5-MeV protons to produce radiation damage in NbSe3, in a homogeneous controlled manner. The defect concentration was varied from 10 to 500 ppm in order to study the effects of pinning on the charge-density-wave motion. Measurements were made of the nonlinear conductivity, the threshold electric field, and the dielectric constant and conductivity as a function of frequency in the range 0-100 MHz. We find that the threshold field and the reciprocal dielectric constant vary linearly with the defect concentration and hence the restoring force.

Original languageEnglish (US)
Pages (from-to)6259-6264
Number of pages6
JournalPhysical Review B
Volume23
Issue number12
DOIs
StatePublished - Jan 1 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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