Effect of plasma treatment on crystallization behavior of amorphous silicon films

K. Pangal, James Christopher Sturm, S. Wagner

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

The crystallization of amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) by thermal annealing is of great interest for display and silicon-on-insulator (SOI) technologies, though long anneal times (about 20 hrs) at 600 °C are typically required. We report that a room temperature hydrogen plasma exposure in a parallel plate diode type Reactive Ion Etcher (RIE) can reduce this crystallization time by a factor of five. This plasma enhanced crystallization can be spatially controlled by masking with patterned oxide, so that both amorphous and polycrystalline areas can be realized simultaneously at desired locations. This effect is due to the creation of seed nuclei at the surface, which enhance crystallization rates.

Original languageEnglish (US)
Pages (from-to)577-582
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume507
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 14 1998Apr 17 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Effect of plasma treatment on crystallization behavior of amorphous silicon films'. Together they form a unique fingerprint.

  • Cite this