Effect of Parameter Variations on the Performance of GaAs/AlGaAs Multiple-Quantumwell Electroabsorption Modulators

Hung Sik Cho, Paul R. Prucnal

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The dependence of electroabsorption in GaAs/ AlxGa1-xAs multiple-quantumwell (MQW) structures on the MQW parameters (Al mole fraction x, well thickness L-, barrier thickness Lb, and interface quality) and on the applied electric field is investigated theoretically. The relationship between the performance of an MQW modulator and electroabsorption is also investigated. The on/off ratio of a modulator using MQW'S with x = 0.45, L- = 75 Å, and Lb = 78 Å is predicted to increase by 20 percent, compared with that using MQW'S with x = 0.3, Lz = 100 Å, Lb = 100 Å, when the MQW total active region thickness is 1 μm.

Original languageEnglish (US)
Pages (from-to)1682-1690
Number of pages9
JournalIEEE Journal of Quantum Electronics
Volume25
Issue number7
DOIs
StatePublished - Jul 1989

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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