The dependence of electroabsorption in GaAs/ AlxGa1-xAs multiple-quantumwell (MQW) structures on the MQW parameters (Al mole fraction x, well thickness L-, barrier thickness Lb, and interface quality) and on the applied electric field is investigated theoretically. The relationship between the performance of an MQW modulator and electroabsorption is also investigated. The on/off ratio of a modulator using MQW'S with x = 0.45, L- = 75 Å, and Lb = 78 Å is predicted to increase by 20 percent, compared with that using MQW'S with x = 0.3, Lz = 100 Å, Lb = 100 Å, when the MQW total active region thickness is 1 μm.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering