Abstract
A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 116-126 |
| Number of pages | 11 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2003 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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