Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas

Mark W. Kiehlbauch; David B. Graves

doi:10.1116/1.1527952

Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas

Mark W. Kiehlbauch, David B. Graves

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.

Original language	English (US)
Pages (from-to)	116-126
Number of pages	11
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	1
DOIs	https://doi.org/10.1116/1.1527952
State	Published - Jan 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1527952

Cite this

@article{fdc13c7842c149b9b36283dcd4bf5a7d,

title = "Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas",

abstract = "A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.",

author = "Kiehlbauch, {Mark W.} and Graves, {David B.}",

year = "2003",

month = jan,

doi = "10.1116/1.1527952",

language = "English (US)",

volume = "21",

pages = "116--126",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas

AU - Kiehlbauch, Mark W.

AU - Graves, David B.

PY - 2003/1

Y1 - 2003/1

N2 - A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.

AB - A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.

UR - http://www.scopus.com/inward/record.url?scp=0037273431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037273431&partnerID=8YFLogxK

U2 - 10.1116/1.1527952

DO - 10.1116/1.1527952

M3 - Article

AN - SCOPUS:0037273431

SN - 0734-2101

VL - 21

SP - 116

EP - 126

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

ER -

Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this