A simulation of silicon etching in chlorine etch gas is used to examine neutral transport, reaction, and collisional coupling with charged species. Thus, etch gas flow rate and inlet position affect the magnitude and profile of silicon redeposition on the wafer. It is found that the redeposition decreases with increasing flow rate.
|Number of pages
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - Jan 2003
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films