Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering

T. I. Kamins, A. A. Yasseri, S. Sharma, R. F.W. Pease, Q. Xia, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucleation. Random nucleation was further suppressed by a two-stage deposition process. Ge nucleation on oxide by chemical vapor deposition was enhanced by coating the oxide surface with an organic self-assembled monolayer (SAM) and by the nanoimprinted surface relief. The nanoimprinted surface relief also provides long-range order in the SAM.

Original languageEnglish (US)
Pages (from-to)1481-1485
Number of pages5
JournalMicroelectronics Journal
Volume37
Issue number12
DOIs
StatePublished - Dec 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Epitaxy
  • Graphoepitaxy
  • Nucleation
  • Self-assembled monolayers

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