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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
J. W.P. Hsu, M. J. Manfra, S. N.G. Chu, C. H. Chen, L. N. Pfeiffer, R. J. Molnar
Research output: Contribution to journal › Article › peer-review
129
Scopus
citations