Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

J. W.P. Hsu, M. J. Manfra, S. N.G. Chu, C. H. Chen, L. N. Pfeiffer, R. J. Molnar

Research output: Contribution to journalArticlepeer-review

127 Scopus citations

Abstract

The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry.

Original languageEnglish (US)
Pages (from-to)3980-3982
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number25
DOIs
StatePublished - Jun 18 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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