Effect of doping on electronic transport through molecular monolayer junctions

Oliver Seitz; Ayelet Vilan; Hagai Cohen; Calvin Chan; Jaehyung Hwang; Antoine Kahn; David Cahen

doi:10.1021/ja071960p

Effect of doping on electronic transport through molecular monolayer junctions

Oliver Seitz, Ayelet Vilan, Hagai Cohen, Calvin Chan, Jaehyung Hwang, Antoine Kahn, David Cahen

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Electron irradiation can alter electronic charge transport through Si-CH₂(CH₂)₁₂-CH₃//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.

Original language	English (US)
Pages (from-to)	7494-7495
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	129
Issue number	24
DOIs	https://doi.org/10.1021/ja071960p
State	Published - Jun 20 2007

All Science Journal Classification (ASJC) codes

General Chemistry
Biochemistry
Catalysis
Colloid and Surface Chemistry

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10.1021/ja071960p

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abstract = "Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.",

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AU - Seitz, Oliver

AU - Vilan, Ayelet

AU - Cohen, Hagai

AU - Chan, Calvin

AU - Hwang, Jaehyung

AU - Kahn, Antoine

AU - Cahen, David

PY - 2007/6/20

Y1 - 2007/6/20

N2 - Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.

AB - Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.

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ER -

Effect of doping on electronic transport through molecular monolayer junctions

Abstract

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