Effect of doping on electronic transport through molecular monolayer junctions

Oliver Seitz, Ayelet Vilan, Hagai Cohen, Calvin Chan, Jaehyung Hwang, Antoine Kahn, David Cahen

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.

Original languageEnglish (US)
Pages (from-to)7494-7495
Number of pages2
JournalJournal of the American Chemical Society
Volume129
Issue number24
DOIs
StatePublished - Jun 20 2007

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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