TY - JOUR
T1 - Effect of doping on electronic transport through molecular monolayer junctions
AU - Seitz, Oliver
AU - Vilan, Ayelet
AU - Cohen, Hagai
AU - Chan, Calvin
AU - Hwang, Jaehyung
AU - Kahn, Antoine
AU - Cahen, David
PY - 2007/6/20
Y1 - 2007/6/20
N2 - Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.
AB - Electron irradiation can alter electronic charge transport through Si-CH2(CH2)12-CH3//Hg molecular junctions. Applying UPS, XPS, Auger, NEXAFS, and electrical transport measurements, we show that irradiation induces defects, most likely C=C bonds and C-C cross-links, which introduce new electronic states into the HOMO-LUMO gap of the alkyl chains, and, hence, effectively dope these layers. We demonstrate a 1-2 order of magnitude enhancement in current, clearly distinguishable from that of defects in as-prepared layers.
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U2 - 10.1021/ja071960p
DO - 10.1021/ja071960p
M3 - Article
C2 - 17523646
AN - SCOPUS:34250845844
SN - 0002-7863
VL - 129
SP - 7494
EP - 7495
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 24
ER -