Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces

J. Meyer, A. Shu, M. Kröger, Antoine Kahn

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Abstract

The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO 3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

Original languageEnglish (US)
Article number133308
JournalApplied Physics Letters
Volume96
Issue number13
DOIs
StatePublished - Apr 12 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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