Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces

J. Meyer; A. Shu; M. Kröger; Antoine Kahn

doi:10.1063/1.3374333

Effect of contamination on the electronic structure and hole-injection properties of MoO₃ /organic semiconductor interfaces

J. Meyer, A. Shu, M. Kröger, Antoine Kahn

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184 Scopus citations

Abstract

The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO₃) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO ₃ are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

Original language	English (US)
Article number	133308
Journal	Applied Physics Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1063/1.3374333
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3374333

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title = "Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces",

abstract = "The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO 3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.",

author = "J. Meyer and A. Shu and M. Kr{\"o}ger and Antoine Kahn",

note = "Funding Information: Work in Princeton was supported by the National Science Foundation (Grant No. DMR-0705920), the Princeton MRSEC of the NSF (Grant No. DMR-0819860), and the Office of Science DOE Energy Frontier Research Center for Interface Science: Solar Electric Materials (DE-SC0001084). J.M. acknowledges the Deutsche Forschungsgemeinschaft (DFG) for generous support within the postdoctoral fellowship program.",

year = "2010",

doi = "10.1063/1.3374333",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

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TY - JOUR

T1 - Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces

AU - Meyer, J.

AU - Shu, A.

AU - Kröger, M.

AU - Kahn, Antoine

N1 - Funding Information: Work in Princeton was supported by the National Science Foundation (Grant No. DMR-0705920), the Princeton MRSEC of the NSF (Grant No. DMR-0819860), and the Office of Science DOE Energy Frontier Research Center for Interface Science: Solar Electric Materials (DE-SC0001084). J.M. acknowledges the Deutsche Forschungsgemeinschaft (DFG) for generous support within the postdoctoral fellowship program.

PY - 2010

Y1 - 2010

N2 - The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO 3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

AB - The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO 3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

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JF - Applied Physics Letters

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Effect of contamination on the electronic structure and hole-injection properties of MoO₃ /organic semiconductor interfaces

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