Effect of carbon on the valence band offset of Si1-x-yGexCy/Si heterojunctions

C. L. Chang, A. St. Amour, James Christopher Sturm

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

We have grown pseudomorphic single crystal Si1-x-yGexCy layers on Si (100) substrates by Rapid Thermal Chemical Vapor Deposition with up to 2.5% substitutional carbon. Capacitance-voltage as well as admittance spectroscopy measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions. The valence band offset of Si1-x-yGexCy/Si decreased by 25-30 meV as 1% carbon was added. Previous studies showed that 1% carbon increased the bandgap of strained Si1-xGex alloys by 21-26 meV, indicating that all the change in bandgap of Si1-xGex as carbon was added is accommodated in the valence band.

Original languageEnglish (US)
Pages (from-to)257-260
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 8 1996Dec 11 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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