Effect of carbon on the valence band offset of siL-x-yGexcy/siheterojunctions

C. L. Chang, A. St.Amour, J. C. Sturm

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We have grown pseudomorphic single crystal Si1.x-y GexCy layers on Si (100) substrates by Rapid Thermal Qiemical Vapor Deposition with up to 2.5% substitutional carbon. Capacitance-voltage as well as admittance spectroscopy measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1.x-y. y GexCy / (100) Si heterojunctions. The valence band offset of Si1.x.yGej1-Cy/Si decreased by 25-30 meV as 1% carbon was added. Previous studies showed that 1% carbon increased the bandgap of strained Si1.GeX alloys by 21-26 meV, indicating that all the change in bandgap of Si1.GeX as carbon was added is accommodated in the valence band.

Original languageEnglish (US)
Pages (from-to)257-260
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 8 1996Dec 11 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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