Abstract
We have grown pseudomorphic single crystal Si1.x-y GexCy layers on Si (100) substrates by Rapid Thermal Qiemical Vapor Deposition with up to 2.5% substitutional carbon. Capacitance-voltage as well as admittance spectroscopy measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1.x-y. y GexCy / (100) Si heterojunctions. The valence band offset of Si1.x.yGej1-Cy/Si decreased by 25-30 meV as 1% carbon was added. Previous studies showed that 1% carbon increased the bandgap of strained Si1.GeX alloys by 21-26 meV, indicating that all the change in bandgap of Si1.GeX as carbon was added is accommodated in the valence band.
Original language | English (US) |
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Pages (from-to) | 257-260 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
State | Published - 1996 |
Event | Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 8 1996 → Dec 11 1996 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry