Abstract
The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | North-Holland |
| Pages | 887-888 |
| Number of pages | 2 |
| Edition | pt 2 |
| ISBN (Print) | 0444869107 |
| State | Published - 1984 |
| Externally published | Yes |
Publication series
| Name | |
|---|---|
| Number | pt 2 |
All Science Journal Classification (ASJC) codes
- General Engineering
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