EFFECT OF ANISOTROPY ON WEAK LOCALIZATION.

R. N. Bhatt; P. Woelfle; T. V. Ramakrishnan

EFFECT OF ANISOTROPY ON WEAK LOCALIZATION.

R. N. Bhatt, P. Woelfle, T. V. Ramakrishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	North-Holland
Pages	887-888
Number of pages	2
Edition	pt 2
ISBN (Print)	0444869107
State	Published - 1984
Externally published	Yes

Publication series

Name
Number	pt 2

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{5076213a22614fe481ee15623209178a,

title = "EFFECT OF ANISOTROPY ON WEAK LOCALIZATION.",

abstract = "The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.",

author = "Bhatt, {R. N.} and P. Woelfle and Ramakrishnan, {T. V.}",

year = "1984",

language = "English (US)",

isbn = "0444869107",

publisher = "North-Holland",

number = "pt 2",

pages = "887--888",

booktitle = "Unknown Host Publication Title",

edition = "pt 2",

}

TY - GEN

T1 - EFFECT OF ANISOTROPY ON WEAK LOCALIZATION.

AU - Bhatt, R. N.

AU - Woelfle, P.

AU - Ramakrishnan, T. V.

PY - 1984

Y1 - 1984

N2 - The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.

AB - The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.

UR - http://www.scopus.com/inward/record.url?scp=0021664019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021664019&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021664019

SN - 0444869107

SP - 887

EP - 888

BT - Unknown Host Publication Title

PB - North-Holland

ER -

EFFECT OF ANISOTROPY ON WEAK LOCALIZATION.

Abstract

Publication series

All Science Journal Classification (ASJC) codes

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