The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy. A diagrammatic analysis is performed both with and without electron-electron interactions. Predictions are compared with recent experiments on Si(110) MOSFETs by Bishop et al.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Number of pages||2|
|State||Published - Dec 1 1984|
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