Effect of an in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions

B. M. Ashkinadze, E. Linder, E. Cohen, L. N. Pfeiffer

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21 Scopus citations

Abstract

The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells and heterojunctions (HJ) is studied under a magnetic field (B) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of B strongly depends on the electron-hole separation, and we revealed remarkable B -induced modifications of the PL spectra in both types of heterostructures. A model considering the direct optical transitions between the conduction and valence subbands that are shifted in k-space under B , accounts qualitatively for the observed spectral modifications. In the HJs, the 2DEG-hole PL intensity is strongly enhanced relatively to the bulk exciton PL with increasing B . This means that the distance between the photoholes and the 2DEG decreases with increasing B , and thus free holes are responsible for the 2DEG-hole PL.

Original languageEnglish (US)
Article number045303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number4
DOIs
StatePublished - Jan 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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