Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

Simon G.J. Mathijssen; Michael Cölle; Henrique Gomes; Edsger C.P. Smits; Bert De Boer; Iain McCulloch; Peter A. Bobbert; Dago M. De Leeuw

doi:10.1002/adma.200602798

Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

Simon G.J. Mathijssen, Michael Cölle, Henrique Gomes, Edsger C.P. Smits, Bert De Boer, Iain McCulloch, Peter A. Bobbert, Dago M. De Leeuw

Research output: Contribution to journal › Article › peer-review

248 Scopus citations

Abstract

Polytriarylamine (PTAA) was used as a model compound, to demonstrate the dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors (FET). PTAA films were spin-coated from toluene, with a layer thickness of 80 nm and their reliability was compared with other polymer films, such as poly(3-hexylthiophene) (P3HT). The influence drain bias current on the stress behavior of these PTAA FETs were also investigated. The measurement of bias current was performed in vacuum at 100°C and it was observed that the current decreased slowly with time. It was assumed that the threshold-voltage shift was due to the effect of trapped charges with surface density. Stress measurements on the PTAA transistors were also performed at various temperatures, to investigate the trapping dynamics.

Original language	English (US)
Pages (from-to)	2785-2789
Number of pages	5
Journal	Advanced Materials
Volume	19
Issue number	19
DOIs	https://doi.org/10.1002/adma.200602798
State	Published - Oct 5 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors",

abstract = "Polytriarylamine (PTAA) was used as a model compound, to demonstrate the dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors (FET). PTAA films were spin-coated from toluene, with a layer thickness of 80 nm and their reliability was compared with other polymer films, such as poly(3-hexylthiophene) (P3HT). The influence drain bias current on the stress behavior of these PTAA FETs were also investigated. The measurement of bias current was performed in vacuum at 100°C and it was observed that the current decreased slowly with time. It was assumed that the threshold-voltage shift was due to the effect of trapped charges with surface density. Stress measurements on the PTAA transistors were also performed at various temperatures, to investigate the trapping dynamics.",

author = "Mathijssen, \{Simon G.J.\} and Michael C{\"o}lle and Henrique Gomes and Smits, \{Edsger C.P.\} and \{De Boer\}, Bert and Iain McCulloch and Bobbert, \{Peter A.\} and \{De Leeuw\}, \{Dago M.\}",

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T1 - Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

AU - Mathijssen, Simon G.J.

AU - Cölle, Michael

AU - Gomes, Henrique

AU - Smits, Edsger C.P.

AU - De Boer, Bert

AU - McCulloch, Iain

AU - Bobbert, Peter A.

AU - De Leeuw, Dago M.

PY - 2007/10/5

Y1 - 2007/10/5

N2 - Polytriarylamine (PTAA) was used as a model compound, to demonstrate the dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors (FET). PTAA films were spin-coated from toluene, with a layer thickness of 80 nm and their reliability was compared with other polymer films, such as poly(3-hexylthiophene) (P3HT). The influence drain bias current on the stress behavior of these PTAA FETs were also investigated. The measurement of bias current was performed in vacuum at 100°C and it was observed that the current decreased slowly with time. It was assumed that the threshold-voltage shift was due to the effect of trapped charges with surface density. Stress measurements on the PTAA transistors were also performed at various temperatures, to investigate the trapping dynamics.

AB - Polytriarylamine (PTAA) was used as a model compound, to demonstrate the dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors (FET). PTAA films were spin-coated from toluene, with a layer thickness of 80 nm and their reliability was compared with other polymer films, such as poly(3-hexylthiophene) (P3HT). The influence drain bias current on the stress behavior of these PTAA FETs were also investigated. The measurement of bias current was performed in vacuum at 100°C and it was observed that the current decreased slowly with time. It was assumed that the threshold-voltage shift was due to the effect of trapped charges with surface density. Stress measurements on the PTAA transistors were also performed at various temperatures, to investigate the trapping dynamics.

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Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

Abstract

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