Dynamics of nonthermal-carrier distributions in gaas generated by femtosecond laser pulses

K. W. Sun, S. A. Lyon

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We have studied hot electron to neutral acceptor recombination luminescence in p-type GaAs held at liquid-helium temperature. We are able to inject a moderate density (1015 cm-3 to 1017 cm-3) of carriers into the sample using femtosecond laser pulses. Two excitation energies are studied, 1.7 eV and 1.97 eV. At both energies the unrelaxed peak, due to electrons recombining with neutral acceptors before scattering, is attenuated considerably at higher carrier densities. The experimental data indicate that rapid carrier-carrier scattering within the highly nonequilibrium injected distribution occurs in the first 150 fs at carrier densities as low as 8 · 1015 cm-3.

Original languageEnglish (US)
Pages (from-to)123-128
Number of pages6
JournalEPL
Volume26
Issue number2
DOIs
StatePublished - Apr 10 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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