A charged two-level system (TLS) coupled to the device was used to model the anomalous characteristics in single-electron transistors (SET). The state of the TLS was found to be depended self-consistently on the state of the transistor. At low-bias, the state of the TLS led to stable gate-voltage-controlled configurations of the offset charge and showed dynamical switching behavior at high bias. It was shown that the gap in the current voltage curve remaining at gate voltage can be explained at low bias in the charging and discharging of a shallow trap.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - Oct 29 2001|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)