Dynamical offset charges in single-electron transistors

D. E. Grupp, T. Zhang, G. J. Dolan, Ned S. Wingreen

Research output: Contribution to journalArticle

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Abstract

A charged two-level system (TLS) coupled to the device was used to model the anomalous characteristics in single-electron transistors (SET). The state of the TLS was found to be depended self-consistently on the state of the transistor. At low-bias, the state of the TLS led to stable gate-voltage-controlled configurations of the offset charge and showed dynamical switching behavior at high bias. It was shown that the gap in the current voltage curve remaining at gate voltage can be explained at low bias in the charging and discharging of a shallow trap.

Original languageEnglish (US)
Article number186805
Pages (from-to)1868051-1868054
Number of pages4
JournalPhysical review letters
Volume87
Issue number18
StatePublished - Oct 29 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Grupp, D. E., Zhang, T., Dolan, G. J., & Wingreen, N. S. (2001). Dynamical offset charges in single-electron transistors. Physical review letters, 87(18), 1868051-1868054. [186805].