Dynamical effects and vacancy motion in silicon at high temperature

Enrico Smargiassi, Roberto Car

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report a first-principles Molecular Dynamics investigation of the atomic motion in Silicon in the presence of an artificially created vacancy at high temperature (T ≥ 1200 K). We observe that atomic diffusion events are affected by strong dynamical correlations. At temperatures close to the melting point we discover characteristic premelting phenomena which involve simultaneous jumps of several atoms and introduce a large amount of disorder in the structure.

Original languageEnglish (US)
Pages (from-to)57-64
Number of pages8
JournalInternational Journal of Modern Physics C
Issue number1
StatePublished - Feb 1996

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Mathematical Physics
  • General Physics and Astronomy
  • Computer Science Applications
  • Computational Theory and Mathematics


Dive into the research topics of 'Dynamical effects and vacancy motion in silicon at high temperature'. Together they form a unique fingerprint.

Cite this