@inproceedings{3f684117193a4d878f15703e2a94ddd9,
title = "Double-heterojunction crystalline silicon solar cell with electron-selective TiO2 cathode contact fabricated at 100°C with open-circuit voltage of 640 mV",
abstract = "A double-heterojunction c-Si solar cell was fabricated at maximum process temperature of 100°C. We demonstrate an electron-selective passivated contact to Si using TiO2, which increased the open-circuit voltage by 45 mV compared to a device with a direct metal to n-type substrate contact. In the fabricated structure, PEDOT/Si replaced the front-side p-n junction of conventional Si-based solar cells while the Si/TiO2 interface is formed on the back-side. Compared to previous work [1], the VOC has increased from 620 to 640 mV while maintaining a maximum process temperature of 100°C. Critical to the improved performance is better passivation of the Si/TiO2 interface. The increase in VOC can be attributed to an interface recombination velocity of ∼ 75 cm/s, which is consistent with photoconductance decay measurements.",
keywords = "carrier selective contact, heterojunction, metal-oxide, passivation, silicon, titanium oxide",
author = "Janam Jhaveri and Nagamatsu, {Ken A.} and Berg, {Alexander H.} and Gabriel Man and Girija Sahasrabudhe and Sigurd Wagner and Jeffrey Schwartz and Antoine Kahn and Sturm, {James C.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356054",
language = "English (US)",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "United States",
}