A double-heterojunction c-Si solar cell was fabricated at maximum process temperature of 100°C. We demonstrate an electron-selective passivated contact to Si using TiO2, which increased the open-circuit voltage by 45 mV compared to a device with a direct metal to n-type substrate contact. In the fabricated structure, PEDOT/Si replaced the front-side p-n junction of conventional Si-based solar cells while the Si/TiO2 interface is formed on the back-side. Compared to previous work , the VOC has increased from 620 to 640 mV while maintaining a maximum process temperature of 100°C. Critical to the improved performance is better passivation of the Si/TiO2 interface. The increase in VOC can be attributed to an interface recombination velocity of ∼ 75 cm/s, which is consistent with photoconductance decay measurements.