Abstract
We studied transport through ultrasmall Si quantum-dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4<T<100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.
Original language | English (US) |
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Pages (from-to) | 1591-1593 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 12 |
DOIs | |
State | Published - Mar 20 2000 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)