Double-dot charge transport in Si single-electron/hole transistors

L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui

Research output: Contribution to journalArticle

52 Scopus citations

Abstract

We studied transport through ultrasmall Si quantum-dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4<T<100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.

Original languageEnglish (US)
Pages (from-to)1591-1593
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number12
DOIs
StatePublished - Mar 20 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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