Doping-induced realignment of molecular levels at organic-organic heterojunctions

Antoine Kahn; Wei Zhao; Weiying Gao; Hector Vázquez; Fernando Flores

doi:10.1016/j.chemphys.2005.09.015

Doping-induced realignment of molecular levels at organic-organic heterojunctions

Antoine Kahn, Wei Zhao, Weiying Gao, Hector Vázquez, Fernando Flores

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic-organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an organic material, and the resulting change in interface dipole and molecular level alignment. This approach provides, at this point, the first comprehensive prediction of energetics at OO heterojunctions.

Original language	English (US)
Pages (from-to)	129-137
Number of pages	9
Journal	Chemical Physics
Volume	325
Issue number	1
DOIs	https://doi.org/10.1016/j.chemphys.2005.09.015
State	Published - Jun 9 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

Keywords

Charge neutrality level
Heterojunctions
Molecular level alignment
Organic semiconductors

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10.1016/j.chemphys.2005.09.015

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title = "Doping-induced realignment of molecular levels at organic-organic heterojunctions",

abstract = "This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic-organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an organic material, and the resulting change in interface dipole and molecular level alignment. This approach provides, at this point, the first comprehensive prediction of energetics at OO heterojunctions.",

keywords = "Charge neutrality level, Heterojunctions, Molecular level alignment, Organic semiconductors",

author = "Antoine Kahn and Wei Zhao and Weiying Gao and Hector V{\'a}zquez and Fernando Flores",

note = "Funding Information: The Princeton group is grateful for support for this work by the National Science Foundation (DMR-0408589), the Princeton MRSEC of the National Science Foundation (DMR-0213706), and the New Jersey Center for Organic Optoelectronics. The Madrid group acknowledges financial support by the Consejer{\'i}a de Educaci{\'o}n de la Comunidad de Madrid, the DIODE network sHPRN-CT-1999-00164d, and the Spanish CICYT under Project No. MAT 2001-0665.",

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doi = "10.1016/j.chemphys.2005.09.015",

language = "English (US)",

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journal = "Chemical Physics",

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T1 - Doping-induced realignment of molecular levels at organic-organic heterojunctions

AU - Kahn, Antoine

AU - Zhao, Wei

AU - Gao, Weiying

AU - Vázquez, Hector

AU - Flores, Fernando

N1 - Funding Information: The Princeton group is grateful for support for this work by the National Science Foundation (DMR-0408589), the Princeton MRSEC of the National Science Foundation (DMR-0213706), and the New Jersey Center for Organic Optoelectronics. The Madrid group acknowledges financial support by the Consejería de Educación de la Comunidad de Madrid, the DIODE network sHPRN-CT-1999-00164d, and the Spanish CICYT under Project No. MAT 2001-0665.

PY - 2006/6/9

Y1 - 2006/6/9

N2 - This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic-organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an organic material, and the resulting change in interface dipole and molecular level alignment. This approach provides, at this point, the first comprehensive prediction of energetics at OO heterojunctions.

AB - This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic-organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an organic material, and the resulting change in interface dipole and molecular level alignment. This approach provides, at this point, the first comprehensive prediction of energetics at OO heterojunctions.

KW - Charge neutrality level

KW - Heterojunctions

KW - Molecular level alignment

KW - Organic semiconductors

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DO - 10.1016/j.chemphys.2005.09.015

M3 - Article

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VL - 325

SP - 129

EP - 137

JO - Chemical Physics

JF - Chemical Physics

IS - 1

ER -

Doping-induced realignment of molecular levels at organic-organic heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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