Doped vs. undoped Si_1-x-yGe_xC_y layers in sub-100 nm vertical p-channel MOSFETs

Keyphrases

• Boron Diffusion 33%
• Channel Length 33%
• Channel Region 33%
• Detrimental Effects 33%
• Diffusion Barrier 33%
• Drain Regions 33%
• Leakage Current 33%
• Oxides 33%
• P-channel MOSFET 100%
• Source/drain 33%
• Sub-100 Nm 100%
• Undoped 100%

Engineering

• Channel Length 33%
• Channel Region 33%
• Detrimental Effect 33%
• Diffusion Barrier 33%
• Doped Layer 33%
• Drain Region 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%

Material Science

• Boron 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 33%