Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs

Min Yang, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

By introducing Si1-x-yGexCy, layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si1-x-yGexCy layers has been studied. Due to detrimental effects from oxide grown on Si1-x-yGexCy layers, doped Si1-x-yGexCy diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si1-x-yGexCy layers is observed.

Original languageEnglish (US)
Pages (from-to)366-370
Number of pages5
JournalThin Solid Films
Volume369
Issue number1
DOIs
StatePublished - Jul 3 2000
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: Sep 12 1999Sep 17 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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