Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs

Min Yang; J. C. Sturm

doi:10.1016/S0040-6090(00)00892-0

Doped vs. undoped Si_1-x-yGe_xC_y layers in sub-100 nm vertical p-channel MOSFETs

Min Yang, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

By introducing Si_1-x-yGe_xC_y, layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si_1-x-yGe_xC_y layers has been studied. Due to detrimental effects from oxide grown on Si_1-x-yGe_xC_y layers, doped Si_1-x-yGe_xC_y diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si_1-x-yGe_xC_y layers is observed.

Original language	English (US)
Pages (from-to)	366-370
Number of pages	5
Journal	Thin Solid Films
Volume	369
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00892-0
State	Published - Jul 3 2000
Event	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: Sep 12 1999 → Sep 17 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00892-0

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title = "Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs",

abstract = "By introducing Si1-x-yGexCy, layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si1-x-yGexCy layers has been studied. Due to detrimental effects from oxide grown on Si1-x-yGexCy layers, doped Si1-x-yGexCy diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si1-x-yGexCy layers is observed.",

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T1 - Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs

AU - Yang, Min

AU - Sturm, J. C.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - By introducing Si1-x-yGexCy, layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si1-x-yGexCy layers has been studied. Due to detrimental effects from oxide grown on Si1-x-yGexCy layers, doped Si1-x-yGexCy diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si1-x-yGexCy layers is observed.

AB - By introducing Si1-x-yGexCy, layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si1-x-yGexCy layers has been studied. Due to detrimental effects from oxide grown on Si1-x-yGexCy layers, doped Si1-x-yGexCy diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si1-x-yGexCy layers is observed.

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DO - 10.1016/S0040-6090(00)00892-0

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VL - 369

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EP - 370

JO - Thin Solid Films

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ER -

Doped vs. undoped Si_1-x-yGe_xC_y layers in sub-100 nm vertical p-channel MOSFETs

Abstract

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