Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures

E. F. Schubert; Loren Pfeiffer; K. W. West; A. Izabelle

doi:10.1063/1.100712

Dopant distribution for maximum carrier mobility in selectively doped Al_0.30Ga_0.70As/GaAs heterostructures

E. F. Schubert, Loren Pfeiffer, K. W. West, A. Izabelle

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36 Scopus citations

Abstract

The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×10⁶ cm² /V s is obtained at low temperatures in a selectively δ-doped heterostructure.

Original language	English (US)
Pages (from-to)	1350-1352
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	14
DOIs	https://doi.org/10.1063/1.100712
State	Published - 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100712

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title = "Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures",

abstract = "The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106 cm2 /V s is obtained at low temperatures in a selectively δ-doped heterostructure.",

author = "Schubert, {E. F.} and Loren Pfeiffer and West, {K. W.} and A. Izabelle",

year = "1989",

doi = "10.1063/1.100712",

language = "English (US)",

volume = "54",

pages = "1350--1352",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures

AU - Schubert, E. F.

AU - Pfeiffer, Loren

AU - West, K. W.

AU - Izabelle, A.

PY - 1989

Y1 - 1989

N2 - The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106 cm2 /V s is obtained at low temperatures in a selectively δ-doped heterostructure.

AB - The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106 cm2 /V s is obtained at low temperatures in a selectively δ-doped heterostructure.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Dopant distribution for maximum carrier mobility in selectively doped Al_0.30Ga_0.70As/GaAs heterostructures

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