TY - JOUR
T1 - Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer
AU - Higgins, Andrew
AU - Mohapatra, Swagat K.
AU - Barlow, Stephen
AU - Marder, Seth R.
AU - Kahn, Antoine
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/4/20
Y1 - 2015/4/20
N2 - Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp∗Cp]2, into the electron transport polymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}, P(NDI2OD-T2). Variable-temperature current-voltage measurements of n-doped P(NDI2OD-T2) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.
AB - Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp∗Cp]2, into the electron transport polymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}, P(NDI2OD-T2). Variable-temperature current-voltage measurements of n-doped P(NDI2OD-T2) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.
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U2 - 10.1063/1.4918627
DO - 10.1063/1.4918627
M3 - Article
AN - SCOPUS:84929485728
SN - 0003-6951
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 163301
ER -