Silicon technology can potentially create low-cost, integrated solutions at Terahertz frequency ranges. However, there are significant challenges in generating sufficient power at these frequency ranges with devices operating near or above fmax and further radiating it directly from the chip with integrated beam-control. In this paper, we review some of our work where we propose a true circuit-electromagnetics co-design approach which removes the artificial partitions among the different levels of abstraction in a conventional system design methodology. In the proposed inverse design approach, we start with the desired radiated THz field and aim to formulate metal surface-currents that could generate such a patthern. We then aim to synthesize the current configuration using a judicious combination of actives and passive on chip. This holistic approach led to the conceptual evolution of Distributed Active Radiator. As a proof-of-concept, we demonstrate the first integrated THz phase-darray in CMOS with a 4×4 array of DARs generating nearly 10 dBm Effective-isotropic-radiated-power at 280 GHz and digitally controlled beam-scanning covering more than 800 in 2D space.