TY - GEN
T1 - Distributed active radiation for THz signal generation
AU - Sengupta, Kaushik
AU - Hajimiri, Ali
PY - 2011
Y1 - 2011
N2 - Despite the aggressive scaling of silicon-based IC's over the past few decades, the transistor characteristics have yet to improve so that the 'THz'-range (∼300GHz-to-3THz) circuits can be effectively designed using the conventional techniques. This has led the few attempts at signal generation at these frequencies in CMOS to produce very small power levels (e.g., tens of nano-watts)[1,2]. The broad range of applications that could benefit from efficient power generation justifies novel approaches that allow high power generation and efficient radiation in CMOS. This can be achieved by removing the artificial boundaries between levels of abstraction such as electromagnetics, antenna, propagation and circuits; when we can truly leverage the advantages of the new design space that lies in the confluence of these separate treatments leading to more optimal design [3].
AB - Despite the aggressive scaling of silicon-based IC's over the past few decades, the transistor characteristics have yet to improve so that the 'THz'-range (∼300GHz-to-3THz) circuits can be effectively designed using the conventional techniques. This has led the few attempts at signal generation at these frequencies in CMOS to produce very small power levels (e.g., tens of nano-watts)[1,2]. The broad range of applications that could benefit from efficient power generation justifies novel approaches that allow high power generation and efficient radiation in CMOS. This can be achieved by removing the artificial boundaries between levels of abstraction such as electromagnetics, antenna, propagation and circuits; when we can truly leverage the advantages of the new design space that lies in the confluence of these separate treatments leading to more optimal design [3].
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U2 - 10.1109/ISSCC.2011.5746322
DO - 10.1109/ISSCC.2011.5746322
M3 - Conference contribution
AN - SCOPUS:79955709394
SN - 9781612843001
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 288
EP - 289
BT - 2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
Y2 - 20 February 2011 through 24 February 2011
ER -