Distinguishing between nonlinear channel transport and contact effects in organic FETs

B. H. Hamadani, J. L. LeBoeuf, R. J. Kline, I. McCulloch, M. Heeney, C. A. Richter, L. J. Richter, D. J. Gundlach

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl) thieno[3,2-b]thiophene) (pBTTT-C14) or poly(3-hexylthiophene) (P3HT) as the active polymer layer. We show that in high mobility devices where the channel resistances are low compared to the contact resistances, the device performance can be dominated by the metal/organic semiconductor (OSC) contacts. However, in sets of devices where the channel resistance is dominant over the contacts (usually the lower mobility devices), we see pronounced field dependence in the saturation regime mobilities consistent with a Poole-Frenkel model of charge transport within the channel. The field-dependent mobility in short-channel devices produces nonlinear output current-voltage characteristics which can be modeled consistently in the Poole-Frenkel framework.

Original languageEnglish (US)
Title of host publicationOrganic Field-Effect Transistors VI
StatePublished - 2007
Externally publishedYes
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceOrganic Field-Effect Transistors VI
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • Channel resistance
  • Contact resistance
  • Organic field-effect transistor
  • Poole-Frenkel effect


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